منابع مشابه
Novel Photo-Detectors and Photo-Detector Systems
Recent developments in photo-detectors and photo-detector systems are reviewed. The main emphasis is made on Silicon Photo-Multipliers (SiPM) novel and very attractive photo-detectors. Their main features are described. Properties of detectors manufactured by different producers are compared. Different applications are discussed including calorimeters, muon detection, tracking, Cherenkov light ...
متن کاملMultianode Photo Multiplier Tubes as Photo Detectors for Ring Imaging Cherenkov Detectors
The 64-channel Multianode Photo Multiplier (MaPMT) has been evaluated as a candidate for the LHCb Ring Imaging Cherenkov (RICH) photo detectors. We present result from data taken with a 3x3 array of closely packed MaPMTs mounted onto the RICH 1 prototype vessel, exposed to charged particle beams at CERN, and read out at LHC speed. Using a LED light source, we have performed spatial light scans ...
متن کاملTheoretical Study of Graphene Nanoribbon Photo-Detectors
Mahdi Pourfath, Hans Kosina, and Siegfried Selberherr Institute for Microelectronics, TU Wien, Gußhausstraße 27–29/E360, A-1040 Wien, Austria Email: {pourfath|kosina|selberherr}@iue.tuwien.ac.at Graphite-related materials such as carbon nanotubes (CNTs) and graphene have been extensively studied in recent years due to their exceptional electronic, opto-electronic, and mechanical properties. How...
متن کاملIII-Nitride Based Avalanche Photo Detectors
Research into III-Nitride based avalanche photodiodes (APDs) is motivated by the need for high sensitivity ultraviolet (UV) detectors in numerous civilian and military applications. By designing III-Nitride photodetectors that utilize low-noise impact ionization high internal gain can be realized—GaN APDs operating in Geiger mode can achieve gains exceeding 1×10. Thus with careful design, it be...
متن کاملPhoto-Detectors Integrated with Resonant Tunneling Diodes
We report on photo-detectors consisting of an optical waveguide that incorporates a resonant tunneling diode (RTD). Operating at wavelengths around 1.55 μm in the optical communications C band we achieve maximum sensitivities of around 0.29 A/W which is dependent on the bias voltage. This is due to the nature of RTD nonlinear current-voltage characteristic that has a negative differential resis...
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ژورنال
عنوان ژورنال: The Review of Laser Engineering
سال: 1985
ISSN: 0387-0200,1349-6603
DOI: 10.2184/lsj.13.78